An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation

In this paper, a new modeling technique is proposed for extracting small-signal lumped-element equivalent-circuit models microwave transistors. The procedure based on using an optimization approach that improved by targeting quasi-static behavior as additional objective function rather than only minimizing the error between simulated and measured scattering parameters. validity of developed methodology successfully demonstrated considering 0.25x1000 ?m 2 gallium nitride (GaN) high-electron-mobility transistor (HEMT) case study.